New LNAs feature state-of-the-art GaN semiconductor technology

Pasternack has released a new series of Low Noise Amplifiers that are ideal for use in ECM, Microwave Radio, VSAT, SATCOM, Radar, Space Systems, electronic defence, R&D, Prototype/Proof of Concept, and test and measurement applications.

Its new series of input protected low noise amplifiers feature GaN Semiconductor technology which gives robust input power protection. GaN semiconductors ensure state-of-the-art performance with an excellent power-to volume ratio that is perfect for broadband high-power applications. These amplifiers provide excellent thermal properties and a notably higher breakdown voltage that tolerates higher RF input power signal levels while preserving excellent low noise figure performance. This is achieved without the necessity of an input protective limiter circuit that is needed for other semiconductor technologies and could contribute to higher noise figure levels.

These new input protected LNAs cover desirable microwave and mm-wave frequency bands that complement the company’s existing portfolio of input protected LNAs that include lower RF frequencies. Features and options encompass broadband frequencies ranging from 1GHz to 23GHz, high gain up to 46dB typical, low noise figures as low as 1.5dB typical and high RF input power handling up to 10W CW. Furthermore, these LNAs possess rugged, mil-grade compact coaxial designs and SMA connectors.

“Our new, innovative line of input protected low noise amplifiers offer the desirable benefit of rugged GaN semiconductor technology to withstand higher RF input power handling without incurring damage. RF designers will find these industry-leading GaN low noise amplifiers extremely useful in receive chains that may be sensitive to higher RF input signal conditions,” said Tim Galla, product line manager.

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